IPP90R500C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Pulsed Drain Current-Max (IDM) :

24A

Power Dissipation-Max :

156W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2008

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

500m Ω @ 6.6A, 10V

Drain to Source Breakdown Voltage :

900V

Number of Pins :

3

Continuous Drain Current (ID) :

11A

Element Configuration :

Single

Number of Terminations :

3

Turn-Off Delay Time :

400 ns

Pin Count :

3

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 100V

Turn On Delay Time :

70 ns

Rise Time :

20ns

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Nominal Vgs :

3 V

Packaging :

Tube

Number of Elements :

1

Vgs (Max) :

±20V

Power Dissipation :

156W

Drain-source On Resistance-Max :

0.5Ohm

Fall Time (Typ) :

25 ns

Lead Free :

Lead Free

Pbfree Code :

yes

Series :

CoolMOS™

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Termination :

Through Hole

Vgs(th) (Max) @ Id :

3.5V @ 740μA

REACH SVHC :

No SVHC

Halogen Free :

Halogen Free

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Dual Supply Voltage :

900V

Qualification Status :

Not Qualified