IPP90N04S402AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Compliant

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 95µA

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

360A

Series :

OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Number of Elements :

1

Package / Case :

TO-220-3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Terminal Position :

Single

Power Dissipation-Max :

150W Tc

Gate Charge (Qg) (Max) @ Vgs :

118nC @ 10V

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 90A, 10V

Drain-source On Resistance-Max :

0.0025Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Avalanche Energy Rating (Eas) :

475 mJ

Surface Mount :

No

DS Breakdown Voltage-Min :

40V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

9430pF @ 25V

Published :

2010

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

90A

Drain to Source Voltage (Vdss) :

40V

FET Type :

N-Channel

Transistor Element Material :

SILICON