IPP90R1K0C3XK

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

5.7A Tc

Drain Current-Max (Abs) (ID) :

5.7A

Pulsed Drain Current-Max (IDM) :

12A

Published :

2008

Power Dissipation-Max :

89W Tc

Drain-source On Resistance-Max :

1Ohm

Number of Elements :

1

Series :

CoolMOS™

Avalanche Energy Rating (Eas) :

97 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Package / Case :

TO-220-3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 370µA

Factory Lead Time :

6 Weeks

JESD-609 Code :

e3

JEDEC-95 Code :

TO-220AB

DS Breakdown Voltage-Min :

900V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 100V

Drain to Source Voltage (Vdss) :

900V

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Surface Mount :

No

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

1 Ω @ 3.3A, 10V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED