IPP60R120P7

Manufacturer :

Infineon Technologies

Product Category :

Specialized ICs

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

18 Weeks

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

FET Type :

N-Channel

Power Dissipation-Max :

95W Tc

Rds On (Max) @ Id, Vgs :

120m Ω @ 8.2A, 10V

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.12Ohm

Avalanche Energy Rating (Eas) :

82 mJ

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 410μA

DS Breakdown Voltage-Min :

600V

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Vgs (Max) :

±20V

Published :

2014

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-220-3

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Series :

CoolMOS™ P7

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

78A

Input Capacitance (Ciss) (Max) @ Vds :

1544pF @ 400V