IPB90N06S404ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

90A

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 90µA

Power Dissipation-Max :

150W Tc

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

OptiMOS™

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

60V

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

DS Breakdown Voltage-Min :

60V

Number of Elements :

1

Avalanche Energy Rating (Eas) :

331 mJ

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

10400pF @ 25V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

360A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Published :

2009

Terminal Position :

Single

Drain-source On Resistance-Max :

0.0037Ohm

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 90A, 10V

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

128nC @ 10V