IPB90N06S4L04ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

331 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

60V

Vgs (Max) :

±16V

Transistor Element Material :

SILICON

Number of Elements :

1

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

90A

Drain-source On Resistance-Max :

0.0034Ohm

Input Capacitance (Ciss) (Max) @ Vds :

13000pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Published :

2009

Power Dissipation-Max :

150W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.2V @ 90μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

OptiMOS™

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

360A

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 90A, 10V

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2