IPB90N04S402ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Series :

OptiMOS™

Reach Compliance Code :

not_compliant

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Terminal Position :

Single

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 90A, 10V

DS Breakdown Voltage-Min :

40V

Pulsed Drain Current-Max (IDM) :

360A

Drain-source On Resistance-Max :

0.0021Ohm

Input Capacitance (Ciss) (Max) @ Vds :

9430pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

475 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

150W Tc

Drain Current-Max (Abs) (ID) :

90A

Gate Charge (Qg) (Max) @ Vgs :

118nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 95µA

Published :

2010

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

40V

Factory Lead Time :

16 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2