IPB35N12S3L26ATMA1

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Mfr.Part #
IPB35N12S3L26ATMA1
Manufacturer
Infineon Technologies
Package / Case
Datasheet
Download
Description
MOSFET N-CHANNEL_100+
Stock
36,231
In Stock :
36,231

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
Surface Mount :
yes
Drain-source On Resistance-Max :
0.0322Ohm
Published :
2016
Pulsed Drain Current-Max (IDM) :
140A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pbfree Code :
yes
Terminal Finish :
Tin (Sn)
Terminal Position :
Single
Terminal Form :
Gull wing
DS Breakdown Voltage-Min :
120V
Packaging :
Tape and Reel (TR)
Configuration :
SINGLE WITH BUILT-IN DIODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSSO-G2
Transistor Application :
SWITCHING
Number of Elements :
1
JEDEC-95 Code :
TO-263AB
Avalanche Energy Rating (Eas) :
175 mJ
Reach Compliance Code :
not_compliant
Number of Terminations :
2
Reference Standard :
AEC-Q101
Drain Current-Max (Abs) (ID) :
35A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Polarity/Channel Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPB35N12S3L26ATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, IPB35N12S3L26ATMA1 pinout, IPB35N12S3L26ATMA1 datasheet PDF, IPB35N12S3L26ATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPB35N12S3L26ATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



Tape & Reel (TR)

IPB35N12S3L26ATMA1 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 175 mJ.35A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 140A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 120V.

IPB35N12S3L26ATMA1 Features


the avalanche energy rating (Eas) is 175 mJ
based on its rated peak drain current 140A.


IPB35N12S3L26ATMA1 Applications


There are a lot of Infineon Technologies
IPB35N12S3L26ATMA1 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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