IPB35N10S3L26ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

175 mJ

Terminal Position :

Single

DS Breakdown Voltage-Min :

100V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

100V

Rds On (Max) @ Id, Vgs :

26.3m Ω @ 35A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

14 Weeks

Terminal Finish :

Tin (Sn)

Number of Terminations :

2

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

35A

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2011

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.4V @ 39μA

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Series :

Automotive, AEC-Q101, OptiMOS™

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

71W Tc

Number of Elements :

1

Drain-source On Resistance-Max :

0.0322Ohm

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 25V

ECCN Code :

EAR99

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

140A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)