IPAW70R950CEXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Drain-source On Resistance-Max :

0.95Ohm

Vgs (Max) :

±20V

ECCN Code :

EAR99

Case Connection :

Isolated

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Series :

CoolMOS™ CE

Current - Continuous Drain (Id) @ 25°C :

7.4A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

50 mJ

Vgs(th) (Max) @ Id :

3.5V @ 150μA

JEDEC-95 Code :

TO-220AB

Published :

2013

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

68W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

700V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

12A

Input Capacitance (Ciss) (Max) @ Vds :

328pF @ 100V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

18 Weeks

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

700V

Operating Temperature :

-40°C~150°C TJ

Package / Case :

TO-220-3 Full Pack

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

15.3nC @ 10V

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

950m Ω @ 1.5A, 10V

FET Type :

N-Channel