IPAW60R600CEXKSA1
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- Mfr.Part #
- IPAW60R600CEXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10.3A TO220
- Stock
- 12,751
- In Stock ：
- 12,751
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 10.3A Tc
- Rds On (Max) @ Id, Vgs :
- 600m Ω @ 2.4A, 10V
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- Threshold Voltage :
- 3V
- Operating Temperature :
- -40°C~150°C TJ
- Packaging :
- Tube
- Series :
- CoolMOS™
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 444pF @ 100V
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.6Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 20.5nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 600V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Package / Case :
- TO-220-3 Full Pack
- Mount :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 19A
- JEDEC-95 Code :
- TO-220AB
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.5V @ 200µA
- DS Breakdown Voltage-Min :
- 600V
- FET Feature :
- Super Junction
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 18 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 10.3A
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2013
- Case Connection :
- Isolated
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 28W Tc
- Datasheets
- IPAW60R600CEXKSA1
N-Channel Tube 600m Ω @ 2.4A, 10V ±20V 444pF @ 100V 20.5nC @ 10V 600V TO-220-3 Full Pack
IPAW60R600CEXKSA1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 444pF @ 100V.This device conducts a continuous drain current (ID) of 10.3A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 19A.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPAW60R600CEXKSA1 Features
a continuous drain current (ID) of 10.3A
based on its rated peak drain current 19A.
a threshold voltage of 3V
a 600V drain to source voltage (Vdss)
IPAW60R600CEXKSA1 Applications
There are a lot of Infineon Technologies
IPAW60R600CEXKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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