IPAW60R280CEXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Package / Case :

TO-220-3 Full Pack, Variant

Rds On (Max) @ Id, Vgs :

280m Ω @ 6.5A, 10V

Drain-source On Resistance-Max :

0.28Ohm

Mount :

Through Hole

Series :

CoolMOS™

Drain to Source Voltage (Vdss) :

600V

Threshold Voltage :

3V

Vgs(th) (Max) @ Id :

3.5V @ 430μA

Factory Lead Time :

18 Weeks

Current - Continuous Drain (Id) @ 25°C :

19.3A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

40A

Power Dissipation-Max :

32W Tc

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Case Connection :

Isolated

FET Type :

N-Channel

Packaging :

Tube

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 100V

ECCN Code :

EAR99

FET Feature :

Super Junction

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2013

Transistor Application :

SWITCHING

Number of Elements :

1

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

19.3A

DS Breakdown Voltage-Min :

600V

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

284 mJ

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Pbfree Code :

yes

Operating Temperature :

-40°C~150°C TJ

Number of Pins :

3

Terminal Position :

Single