IMH9AT110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Pbfree Code :

yes

Resistor - Emitter Base (R2) :

47k Ω

Time@Peak Reflow Temperature-Max (s) :

10

Frequency - Transition :

250MHz

Voltage - Rated DC :

50V

Published :

2004

Factory Lead Time :

13 Weeks

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

HTS Code :

8541.21.00.75

Peak Reflow Temperature (Cel) :

260

VCEsat-Max :

0.3 V

Transistor Type :

2 NPN - Pre-Biased (Dual)

Polarity :

NPN

Collector Emitter Voltage (VCEO) :

300mV

hFE Min :

68

Terminal Form :

Gull wing

Min Operating Temperature :

-55°C

Resistor - Base (R1) :

10k Ω

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Max Collector Current :

100mA

Transition Frequency :

250MHz

Max Breakdown Voltage :

50V

Max Power Dissipation :

300mW

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

REACH SVHC :

No SVHC

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Pin Count :

6

Max Operating Temperature :

150°C

Transistor Application :

SWITCHING

Number of Terminations :

6

Element Configuration :

Dual

Continuous Collector Current :

100mA

Package / Case :

SC-74, SOT-457

Base Part Number :

*MH9

Power Dissipation :

300mW

Collector Emitter Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

500nA

ECCN Code :

EAR99

Lead Free :

Lead Free

Current Rating :

70mA

Number of Pins :

6

Terminal Finish :

TIN SILVER COPPER

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 4.7