IMH5AT108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

VCEsat-Max :

0.3 V

JESD-609 Code :

e1

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Base Part Number :

*MH5

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 5mA 5V

Terminal Finish :

TIN SILVER COPPER

Resistor - Base (R1) :

22k Ω

Resistor - Emitter Base (R2) :

22k Ω

Voltage - Rated DC :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Radiation Hardening :

No

Frequency - Transition :

250MHz

ECCN Code :

EAR99

HTS Code :

8541.21.00.95

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Pbfree Code :

yes

Package / Case :

SC-74, SOT-457

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Voltage (VCEO) :

300mV

Max Collector Current :

100mA

hFE Min :

56

Max Breakdown Voltage :

50V

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

Element Configuration :

Dual

Current Rating :

30mA

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

10 Weeks

Polarity :

NPN

Transistor Type :

2 NPN - Pre-Biased (Dual)

Peak Reflow Temperature (Cel) :

260

Min Operating Temperature :

-55°C

Number of Terminations :

6

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

REACH SVHC :

No SVHC

Max Power Dissipation :

300mW

Power Dissipation :

300mW

Published :

2008

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Form :

Gull wing