IMD9AT108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Polarity :

NPN, PNP

Transition Frequency :

250MHz

VCEsat-Max :

0.3 V

Current Rating :

100mA

Packaging :

Tape and Reel (TR)

Max Collector Current :

100mA

Resistor - Base (R1) :

10k Ω

Base Part Number :

*MD9

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Length :

3mm

Resistor - Emitter Base (R2) :

47k Ω

Number of Pins :

6

Width :

1.8mm

Continuous Collector Current :

100mA

Published :

2010

Element Configuration :

Dual

hFE Min :

68

Package / Case :

SC-74, SOT-457

Max Breakdown Voltage :

50V

Operating Supply Voltage :

50V

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

500nA

Mount :

Surface Mount

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Frequency - Transition :

250MHz

Max Operating Temperature :

150°C

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Height :

1.2mm

Power Dissipation :

300mW

Terminal Form :

Gull wing

HTS Code :

8541.21.00.75

Time@Peak Reflow Temperature-Max (s) :

10

Factory Lead Time :

13 Weeks

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

50V

Number of Terminations :

6

Max Power Dissipation :

300mW

Collector Emitter Voltage (VCEO) :

300mV

Max Output Current :

100mA

Emitter Base Voltage (VEBO) :

5V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Transistor Application :

SWITCHING

Pin Count :

6

JESD-609 Code :

e1

Min Operating Temperature :

-55°C