IMD8AT108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Terminal Form :

Gull wing

VCEsat-Max :

0.3 V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Current Rating :

100mA

Max Operating Temperature :

150°C

Resistor - Base (R1) :

47k Ω

Number of Pins :

6

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 5mA

HTS Code :

8541.21.00.75

Max Power Dissipation :

300mW

Packaging :

Tape and Reel (TR)

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

50V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Package / Case :

SC-74, SOT-457

Transistor Element Material :

SILICON

Mount :

Surface Mount

ECCN Code :

EAR99

Polarity :

NPN, PNP

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Pin Count :

6

Lead Free :

Lead Free

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

hFE Min :

100

JESD-609 Code :

e1

Element Configuration :

Dual

Published :

1999

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

250MHz

Time@Peak Reflow Temperature-Max (s) :

10