IMD6AT108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Collector Current :

100mA

Published :

2004

Factory Lead Time :

7 Weeks

Max Power Dissipation :

300mW

Transition Frequency :

250MHz

Terminal Finish :

TIN SILVER COPPER

HTS Code :

8541.21.00.75

Polarity :

NPN, PNP

Continuous Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Voltage (VCEO) :

50V

Additional Feature :

BUILT-IN BIAS RESISTOR

Current Rating :

100mA

Min Operating Temperature :

-55°C

DC Current Gain-Min (hFE) :

100

Mount :

Surface Mount

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Number of Terminations :

6

Pin Count :

6

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

50V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

10

Power Dissipation :

300mW

Number of Elements :

2

Package / Case :

SMD/SMT

Element Configuration :

Dual

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Max Output Current :

100mA

hFE Min :

100

JESD-609 Code :

e1

VCEsat-Max :

0.3 V

Operating Supply Voltage :

50V

Max Breakdown Voltage :

50V

Pbfree Code :

yes