IKW15N120H3
- Mfr.Part #
- IKW15N120H3
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IKW15N120 - DISCRETE IGBT WITH A
- Stock
- 240
- In Stock :
- 240
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Polarity/Channel Type :
- N-Channel
- Turn Off Time-Nom (toff) :
- 370 ns
- Terminal Position :
- Single
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 15A
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge :
- 75nC
- Factory Lead Time :
- 26 Weeks
- ECCN Code :
- EAR99
- Input Type :
- Standard
- Current - Collector (Ic) (Max) :
- 30A
- Current - Collector Pulsed (Icm) :
- 60A
- Published :
- 2006
- Td (on/off) @ 25°C :
- 21ns/260ns
- Surface Mount :
- No
- Transistor Application :
- POWER CONTROL
- Power - Max :
- 217W
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Switching Energy :
- 1.55mJ
- IGBT Type :
- Trench Field Stop
- Number of Terminations :
- 3
- Turn On Time :
- 49 ns
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSFM-T3
- Reverse Recovery Time :
- 260ns
- Operating Temperature :
- -40°C~175°C TJ
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-247-3
- Series :
- TrenchStop®
- Test Condition :
- 600V, 15A, 35 Ω, 15V
- Datasheets
- IKW15N120H3

IKW15N120H3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IKW15N120H3FKSA1 Description
The IKW15N120H3FKSA1 is a High Speed IGBT in Trench and field-stop technology with soft, fast recovery anti-parallel diode. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behavior, leading to low turn-OFF losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design.
IKW15N120H3FKSA1 Features
-
Halogen-free
-
Green product
-
Short-circuit capability
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Excellent performance
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Very good EMI behaviour
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Low switching and conduction losses
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Low switching losses for high efficiency
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Best-in-class IGBT efficiency and EMI behaviour
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Fast switching behavior with low EMI emissions
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Small gate resistor for reduced delay time and voltage overshoot
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Packaged with and without freewheeling diode for increased design freedom
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Optimized diode for target applications, meaning further improvement in switching losses
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Low gate resistor selection is possible (down to 5R) whilst maintaining excellent switching behaviour
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Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz
IKW15N120H3FKSA1 Applications
-
Power Management
-
Alternative Energy
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