IHD10N60RA

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Mfr.Part #
IHD10N60RA
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
IGBT 600V 20A 110W TO252-3
Stock
34,535
In Stock :
34,535

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Number of Terminations :
2
Pin Count :
3
Number of Pins :
3
Gate Charge :
62nC
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Gate-Emitter Voltage-Max :
20V
Gate-Emitter Thr Voltage-Max :
5.7V
Pbfree Code :
yes
Number of Elements :
1
Operating Temperature :
-40°C~175°C TJ
Configuration :
SINGLE WITH BUILT-IN DIODE
Max Collector Current :
20A
Collector Emitter Voltage (VCEO) :
600V
Turn Off Time-Nom (toff) :
355 ns
Time@Peak Reflow Temperature-Max (s) :
40
Halogen Free :
Not Halogen Free
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status :
RoHS Compliant
Test Condition :
400V, 10A, 23 Ω, 15V
Collector Emitter Breakdown Voltage :
600V
Series :
TrenchStop®
JESD-30 Code :
R-PSSO-G2
Case Connection :
COLLECTOR
Max Power Dissipation :
110W
Vce(on) (Max) @ Vge, Ic :
1.9V @ 15V, 10A
Current - Collector Pulsed (Icm) :
30A
Packaging :
Tape and Reel (TR)
Terminal Position :
Single
Power - Max :
110W
Surface Mount :
yes
Terminal Finish :
MATTE TIN
Terminal Form :
Gull wing
Peak Reflow Temperature (Cel) :
260
Transistor Application :
POWER CONTROL
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Mounting Type :
Surface Mount
IGBT Type :
Trench
Td (on/off) @ 25°C :
-/170ns
Published :
2012
Switching Energy :
270μJ
Qualification Status :
Not Qualified
Input Type :
Standard
Datasheets
IHD10N60RA
Introducing Transistors - IGBTs - Single Infineon Technologies IHD10N60RA from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Number of Pins:3, Operating Temperature:-40°C~175°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, IHD10N60RA pinout, IHD10N60RA datasheet PDF, IHD10N60RA amp .Beyond Transistors - IGBTs - Single Infineon Technologies IHD10N60RA ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IHD10N60RA


IHD10N60RA datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IHD10N60RA Description

 

IHD10N60RA transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IHD10N60RA MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IHD10N60RA has the common source configuration.

 

 

IHD10N60RA Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

IHD10N60RA Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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