IHD10N60RA
- Mfr.Part #
- IHD10N60RA
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IGBT 600V 20A 110W TO252-3
- Stock
- 34,535
- In Stock :
- 34,535
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Power - Max :
- 110W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- POWER CONTROL
- Current - Collector Pulsed (Icm) :
- 30A
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 110W
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Td (on/off) @ 25°C :
- -/170ns
- Surface Mount :
- yes
- Turn Off Time-Nom (toff) :
- 355 ns
- Max Collector Current :
- 20A
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Terminal Finish :
- MATTE TIN
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Polarity/Channel Type :
- N-Channel
- Vce(on) (Max) @ Vge, Ic :
- 1.9V @ 15V, 10A
- Input Type :
- Standard
- Operating Temperature :
- -40°C~175°C TJ
- Halogen Free :
- Not Halogen Free
- Switching Energy :
- 270μJ
- IGBT Type :
- Trench
- Test Condition :
- 400V, 10A, 23 Ω, 15V
- Number of Terminations :
- 2
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Gate-Emitter Thr Voltage-Max :
- 5.7V
- Collector Emitter Voltage (VCEO) :
- 600V
- JESD-30 Code :
- R-PSSO-G2
- Collector Emitter Breakdown Voltage :
- 600V
- Gate-Emitter Voltage-Max :
- 20V
- Published :
- 2012
- Gate Charge :
- 62nC
- Series :
- TrenchStop®
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- Datasheets
- IHD10N60RA

IHD10N60RA datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IHD10N60RA Description
IHD10N60RA transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IHD10N60RA MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IHD10N60RA has the common source configuration.
IHD10N60RA Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IHD10N60RA Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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