IHD10N60RA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Number of Terminations :

2

Pin Count :

3

Number of Pins :

3

Gate Charge :

62nC

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Gate-Emitter Voltage-Max :

20V

Gate-Emitter Thr Voltage-Max :

5.7V

Pbfree Code :

yes

Number of Elements :

1

Operating Temperature :

-40°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Max Collector Current :

20A

Collector Emitter Voltage (VCEO) :

600V

Turn Off Time-Nom (toff) :

355 ns

Time@Peak Reflow Temperature-Max (s) :

40

Halogen Free :

Not Halogen Free

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status :

RoHS Compliant

Test Condition :

400V, 10A, 23 Ω, 15V

Collector Emitter Breakdown Voltage :

600V

Series :

TrenchStop®

JESD-30 Code :

R-PSSO-G2

Case Connection :

COLLECTOR

Max Power Dissipation :

110W

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 10A

Current - Collector Pulsed (Icm) :

30A

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Power - Max :

110W

Surface Mount :

yes

Terminal Finish :

MATTE TIN

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Transistor Application :

POWER CONTROL

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mounting Type :

Surface Mount

IGBT Type :

Trench

Td (on/off) @ 25°C :

-/170ns

Published :

2012

Switching Energy :

270μJ

Qualification Status :

Not Qualified

Input Type :

Standard