IHD10N60RA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Power - Max :

110W

Time@Peak Reflow Temperature-Max (s) :

40

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Peak Reflow Temperature (Cel) :

260

Transistor Application :

POWER CONTROL

Current - Collector Pulsed (Icm) :

30A

Transistor Element Material :

SILICON

Max Power Dissipation :

110W

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Td (on/off) @ 25°C :

-/170ns

Surface Mount :

yes

Turn Off Time-Nom (toff) :

355 ns

Max Collector Current :

20A

Number of Pins :

3

Terminal Form :

Gull wing

Pbfree Code :

yes

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Polarity/Channel Type :

N-Channel

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 10A

Input Type :

Standard

Operating Temperature :

-40°C~175°C TJ

Halogen Free :

Not Halogen Free

Switching Energy :

270μJ

IGBT Type :

Trench

Test Condition :

400V, 10A, 23 Ω, 15V

Number of Terminations :

2

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Pin Count :

3

Gate-Emitter Thr Voltage-Max :

5.7V

Collector Emitter Voltage (VCEO) :

600V

JESD-30 Code :

R-PSSO-G2

Collector Emitter Breakdown Voltage :

600V

Gate-Emitter Voltage-Max :

20V

Published :

2012

Gate Charge :

62nC

Series :

TrenchStop®

Qualification Status :

Not Qualified

Terminal Position :

Single