IHD10N60RA

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Mfr.Part #
IHD10N60RA
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
IGBT 600V 20A 110W TO252-3
Stock
34,535
In Stock :
34,535

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Case Connection :
COLLECTOR
IGBT Type :
Trench
Switching Energy :
270μJ
Time@Peak Reflow Temperature-Max (s) :
40
Test Condition :
400V, 10A, 23 Ω, 15V
Operating Temperature :
-40°C~175°C TJ
Max Power Dissipation :
110W
Collector Emitter Voltage (VCEO) :
600V
Input Type :
Standard
Published :
2012
Gate-Emitter Thr Voltage-Max :
5.7V
Packaging :
Tape and Reel (TR)
Pbfree Code :
yes
JESD-609 Code :
e3
Polarity/Channel Type :
N-Channel
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Collector Emitter Breakdown Voltage :
600V
Number of Terminations :
2
Peak Reflow Temperature (Cel) :
260
JESD-30 Code :
R-PSSO-G2
Pin Count :
3
Number of Elements :
1
Terminal Form :
Gull wing
Gate Charge :
62nC
Td (on/off) @ 25°C :
-/170ns
Transistor Application :
POWER CONTROL
Configuration :
SINGLE WITH BUILT-IN DIODE
Current - Collector Pulsed (Icm) :
30A
Terminal Position :
Single
Mounting Type :
Surface Mount
Turn Off Time-Nom (toff) :
355 ns
Gate-Emitter Voltage-Max :
20V
RoHS Status :
RoHS Compliant
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Halogen Free :
Not Halogen Free
Number of Pins :
3
Series :
TrenchStop®
Surface Mount :
yes
Vce(on) (Max) @ Vge, Ic :
1.9V @ 15V, 10A
Terminal Finish :
MATTE TIN
Power - Max :
110W
Max Collector Current :
20A
Datasheets
IHD10N60RA
Introducing Transistors - IGBTs - Single Infineon Technologies IHD10N60RA from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~175°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Mounting Type:Surface Mount, Number of Pins:3, IHD10N60RA pinout, IHD10N60RA datasheet PDF, IHD10N60RA amp .Beyond Transistors - IGBTs - Single Infineon Technologies IHD10N60RA ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IHD10N60RA


IHD10N60RA datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IHD10N60RA Description

 

IHD10N60RA transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IHD10N60RA MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IHD10N60RA has the common source configuration.

 

 

IHD10N60RA Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

IHD10N60RA Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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