IFS100B12N3E4_B39

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Modules

Terminal Position :

UPPER

Current - Collector (Ic) (Max) :

100A

Turn Off Time-Nom (toff) :

610 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Three Phase Inverter

Power Dissipation-Max (Abs) :

515W

ECCN Code :

EAR99

VCEsat-Max :

2.1 V

Pbfree Code :

No

Turn On Time :

210 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Terminal Form :

UNSPECIFIED

Transistor Element Material :

SILICON

Transistor Application :

POWER CONTROL

Surface Mount :

No

Reach Compliance Code :

Compliant

Additional Feature :

UL RECOGNIZED

NTC Thermistor :

yes

Number of Elements :

6

Power - Max :

515W

Input :

Standard

Qualification Status :

Not Qualified

Published :

2009

Number of Terminations :

34

Mounting Type :

Chassis Mount

Case Connection :

Isolated

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Collector Emitter Breakdown (Max) :

1200V

Package / Case :

Module

IGBT Type :

Trench Field Stop

Gate-Emitter Voltage-Max :

20V

Current - Collector Cutoff (Max) :

1mA

Operating Temperature :

175°C TJ

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 100A

RoHS Status :

RoHS Compliant

Pin Count :

34

JESD-30 Code :

R-XUFM-X34

Input Capacitance (Cies) @ Vce :

6.3nF @ 25V