HUFA76633S3S
- Mfr.Part #
- HUFA76633S3S
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 39A D2PAK
- Stock
- 43,961
- In Stock :
- 43,961
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.82pF @ 25V
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Drain-source On Resistance-Max :
- 0.037Ohm
- Power Dissipation-Max :
- 145W Tc
- JESD-30 Code :
- R-PSSO-G2
- Drain to Source Voltage (Vdss) :
- 100V
- Number of Elements :
- 1
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 67nC @ 10V
- Terminal Finish :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 100V
- Number of Terminations :
- 2
- Qualification Status :
- COMMERCIAL
- Drain Current-Max (Abs) (ID) :
- 39A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs (Max) :
- ±16V
- Current - Continuous Drain (Id) @ 25°C :
- 39A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- Gull wing
- Series :
- UltraFET™
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- Unknown
- Case Connection :
- DRAIN
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 39A, 10V
- FET Type :
- N-Channel
- Datasheets
- HUFA76633S3S

N-Channel Tube 35m Ω @ 39A, 10V ±16V 1.82pF @ 25V 67nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA76633S3S Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1.82pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 39A.In order for DS breakdown voltage to remain above 100V, it should remain above the 100V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
HUFA76633S3S Features
a 100V drain to source voltage (Vdss)
HUFA76633S3S Applications
There are a lot of Rochester Electronics, LLC
HUFA76633S3S applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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