HUFA76629D3S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

52m Ω @ 20A, 10V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3V @ 250µA

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-252AA

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

20A

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.055Ohm

Number of Elements :

1

Series :

UltraFET™

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

1.285pF @ 25V

Transistor Application :

SWITCHING

Power Dissipation-Max :

110W Tc

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

100V

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

100V

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Terminal Position :

Single

Packaging :

Tube

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Vgs (Max) :

±16V

JESD-609 Code :

e3

Qualification Status :

COMMERCIAL

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Unknown