HUFA76609D3ST

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.168Ohm

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

100V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

160m Ω @ 10A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3V @ 250µA

Surface Mount :

yes

Vgs (Max) :

±16V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

425pF @ 25V

Drain Current-Max (Abs) (ID) :

10A

Terminal Finish :

MATTE TIN

Number of Terminations :

2

Qualification Status :

COMMERCIAL

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

100V

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-252AA

Terminal Form :

Gull wing

Number of Elements :

1

Pbfree Code :

yes

Series :

UltraFET™

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

49W Tc