HUFA76429D3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

23m Ω @ 20A, 10V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Number of Elements :

1

Published :

2001

Continuous Drain Current (ID) :

20A

Factory Lead Time :

8 Weeks

Rise Time :

36ns

Number of Pins :

3

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Weight :

343.08mg

Power Dissipation-Max :

110W Tc

Mounting Type :

Through Hole

Voltage - Rated DC :

60V

Vgs (Max) :

±16V

Element Configuration :

Single

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

56 ns

ECCN Code :

EAR99

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Power Dissipation :

110W

Mount :

Through Hole

Turn On Delay Time :

7.7 ns

Packaging :

Tube

Radiation Hardening :

No

Series :

UltraFET™

Drain to Source Breakdown Voltage :

60V

Resistance :

27mOhm

Vgs(th) (Max) @ Id :

3V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current Rating :

20A

Turn-Off Delay Time :

60 ns

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

16V

Input Capacitance (Ciss) (Max) @ Vds :

1480pF @ 25V

Number of Terminations :

3