HUFA76419P3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain Current-Max (Abs) (ID) :

29A

Package / Case :

TO-220-3

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

60V

Peak Reflow Temperature (Cel) :

Not Applicable

Pbfree Code :

yes

Number of Terminations :

3

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Case Connection :

DRAIN

Vgs (Max) :

±16V

Power Dissipation-Max :

75W Tc

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Rds On (Max) @ Id, Vgs :

35m Ω @ 29A, 10V

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Drain to Source Voltage (Vdss) :

60V

Series :

UltraFET™

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.04Ohm

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Qualification Status :

COMMERCIAL

Terminal Finish :

MATTE TIN

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

3V @ 250µA

JEDEC-95 Code :

TO-220AB

JESD-30 Code :

R-PSFM-T3

Reach Compliance Code :

Unknown

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE