HUFA76419D3ST
- Mfr.Part #
- HUFA76419D3ST
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- N-CHANNEL LOGIC LEVEL ULTRAFET
- Stock
- 227
- In Stock :
- 227
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Width :
- 6.22mm
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 50 ns
- Turn On Delay Time :
- 6.5 ns
- Power Dissipation-Max :
- 75W Tc
- Rds On (Max) @ Id, Vgs :
- 37m Ω @ 20A, 10V
- Gate to Source Voltage (Vgs) :
- 16V
- Operating Temperature :
- -55°C~175°C TJ
- Length :
- 6.73mm
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Power Dissipation :
- 75W
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±16V
- Published :
- 2002
- Continuous Drain Current (ID) :
- 20A
- Fall Time (Typ) :
- 50 ns
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 900pF @ 25V
- Weight :
- 260.37mg
- Height :
- 2.39mm
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PSSO-G2
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- JEDEC-95 Code :
- TO-252AA
- Series :
- UltraFET™
- Current Rating :
- 20A
- Gate Charge (Qg) (Max) @ Vgs :
- 27.5nC @ 10V
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 60V
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mount :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Rise Time :
- 35ns
- Drain to Source Breakdown Voltage :
- 60V
- Datasheets
- HUFA76419D3ST

N-Channel Tape & Reel (TR) 37m Ω @ 20A, 10V ±16V 900pF @ 25V 27.5nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
HUFA76419D3ST Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 900pF @ 25V.This device conducts a continuous drain current (ID) of 20A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 50 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 6.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 16V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
HUFA76419D3ST Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 50 ns
HUFA76419D3ST Applications
There are a lot of ON Semiconductor
HUFA76419D3ST applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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