HUFA76413D3ST
- Mfr.Part #
- HUFA76413D3ST
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 20A TO252AA
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±16V
- DS Breakdown Voltage-Min :
- 60V
- Drain Current-Max (Abs) (ID) :
- 20A
- JEDEC-95 Code :
- TO-252AA
- Series :
- UltraFET™
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 49m Ω @ 20A, 10V
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~175°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Drain to Source Voltage (Vdss) :
- 60V
- FET Type :
- N-Channel
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSSO-G2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- Unknown
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain-source On Resistance-Max :
- 0.061Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 645pF @ 25V
- Qualification Status :
- COMMERCIAL
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Number of Terminations :
- 2
- Terminal Finish :
- MATTE TIN
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 60W Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Datasheets
- HUFA76413D3ST
HUFA76413D3ST Documents

N-Channel Tape & Reel (TR) 49m Ω @ 20A, 10V ±16V 645pF @ 25V 20nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
HUFA76413D3ST Overview
A device's maximal input capacitance is 645pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 20A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
HUFA76413D3ST Features
a 60V drain to source voltage (Vdss)
HUFA76413D3ST Applications
There are a lot of Rochester Electronics, LLC
HUFA76413D3ST applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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