HUFA76413D3ST

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

60V

Number of Elements :

1

FET Type :

N-Channel

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

49m Ω @ 20A, 10V

Series :

UltraFET™

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

20A

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.061Ohm

JEDEC-95 Code :

TO-252AA

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

60V

Reach Compliance Code :

Unknown

Terminal Form :

Gull wing

Terminal Position :

Single

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Vgs(th) (Max) @ Id :

3V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

645pF @ 25V

Terminal Finish :

MATTE TIN

Power Dissipation-Max :

60W Tc

Number of Terminations :

2

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±16V

Operating Temperature :

-55°C~175°C TJ