HUFA76409D3S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

18A

DS Breakdown Voltage-Min :

60V

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

Not Applicable

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.075Ohm

Pbfree Code :

yes

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

49W Tc

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

COMMERCIAL

Drain to Source Voltage (Vdss) :

60V

Operating Mode :

ENHANCEMENT MODE

Series :

UltraFET™

Vgs (Max) :

±16V

JEDEC-95 Code :

TO-252AA

Input Capacitance (Ciss) (Max) @ Vds :

485pF @ 25V

Reach Compliance Code :

Unknown

Number of Terminations :

2

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

63m Ω @ 18A, 10V

Terminal Form :

Gull wing

Number of Elements :

1

Packaging :

Tube