HUFA76407D3ST

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±16V

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain-source On Resistance-Max :

0.092Ohm

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

UltraFET™

Number of Terminations :

2

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

12A Tc

JEDEC-95 Code :

TO-252AA

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

12A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

11.3nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Terminal Form :

Gull wing

Surface Mount :

yes

Terminal Finish :

NOT SPECIFIED

Qualification Status :

COMMERCIAL

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

60V

Rds On (Max) @ Id, Vgs :

92m Ω @ 13A, 10V

Power Dissipation-Max :

38W Tc