HUFA75652G3

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Mfr.Part #
HUFA75652G3
Manufacturer
Fairchild Semiconductor
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 100V 75A TO247-3
Stock
31,585
In Stock :
31,585

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Case Connection :
DRAIN
Transistor Application :
SWITCHING
JESD-30 Code :
R-PSFM-T3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
UltraFET™
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
475nC @ 20V
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Package / Case :
TO-247-3
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Input Capacitance (Ciss) (Max) @ Vds :
7.585pF @ 25V
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Single
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 250µA
Peak Reflow Temperature (Cel) :
Not Applicable
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
COMMERCIAL
Surface Mount :
No
Drain-source On Resistance-Max :
0.008Ohm
Mounting Type :
Through Hole
Packaging :
Tube
Drain Current-Max (Abs) (ID) :
75A
Terminal Finish :
MATTE TIN
Operating Temperature :
-55°C~175°C TJ
Number of Elements :
1
FET Type :
N-Channel
Pbfree Code :
yes
Power Dissipation-Max :
515W Tc
Rds On (Max) @ Id, Vgs :
8m Ω @ 75A, 10V
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
JESD-609 Code :
e3
Drain to Source Voltage (Vdss) :
100V
DS Breakdown Voltage-Min :
100V
Configuration :
SINGLE WITH BUILT-IN DIODE
Datasheets
HUFA75652G3
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor HUFA75652G3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, HUFA75652G3 pinout, HUFA75652G3 datasheet PDF, HUFA75652G3 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor HUFA75652G3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor HUFA75652G3


N-Channel Tube 8m Ω @ 75A, 10V ±20V 7.585pF @ 25V 475nC @ 20V 100V TO-247-3

HUFA75652G3 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7.585pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 75A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 100V in order to maintain normal operation.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

HUFA75652G3 Features


a 100V drain to source voltage (Vdss)


HUFA75652G3 Applications


There are a lot of Rochester Electronics, LLC
HUFA75652G3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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