HUFA75645S3S
- Mfr.Part #
- HUFA75645S3S
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 75A D2PAK
- Stock
- 26,886
- In Stock :
- 26,886
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Series :
- UltraFET™
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain to Source Breakdown Voltage :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Power Dissipation-Max :
- 310W Tc
- Factory Lead Time :
- 8 Weeks
- Number of Terminations :
- 2
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 75A, 10V
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Voltage - Rated DC :
- 100V
- JESD-609 Code :
- e3
- Power Dissipation :
- 310W
- Continuous Drain Current (ID) :
- 75A
- Terminal Finish :
- Tin (Sn)
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Rise Time :
- 117ns
- Turn On Delay Time :
- 14 ns
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 3790pF @ 25V
- Weight :
- 1.31247g
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 238nC @ 20V
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 75A
- Fall Time (Typ) :
- 97 ns
- Turn-Off Delay Time :
- 41 ns
- Datasheets
- HUFA75645S3S

N-Channel Tape & Reel (TR) 14m Ω @ 75A, 10V ±20V 3790pF @ 25V 238nC @ 20V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA75645S3S Overview
The maximum input capacitance of this device is 3790pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 75A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 41 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 14 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
HUFA75645S3S Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 41 ns
HUFA75645S3S Applications
There are a lot of ON Semiconductor
HUFA75645S3S applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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