HUFA75645P3
- Mfr.Part #
- HUFA75645P3
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 75A TO220-3
- Stock
- 47,657
- In Stock :
- 47,657
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- COMMERCIAL
- Reach Compliance Code :
- Unknown
- Gate Charge (Qg) (Max) @ Vgs :
- 238nC @ 20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- MATTE TIN
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- DS Breakdown Voltage-Min :
- 100V
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-220AB
- Terminal Position :
- Single
- Drain to Source Voltage (Vdss) :
- 100V
- Surface Mount :
- No
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- Drain-source On Resistance-Max :
- 0.014Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 3.79pF @ 25V
- Drain Current-Max (Abs) (ID) :
- 75A
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tube
- Case Connection :
- DRAIN
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Power Dissipation-Max :
- 310W Tc
- JESD-30 Code :
- R-PSFM-T3
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Series :
- UltraFET™
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 75A, 10V
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Datasheets
- HUFA75645P3

N-Channel Tube 14m Ω @ 75A, 10V ±20V 3.79pF @ 25V 238nC @ 20V 100V TO-220-3
HUFA75645P3 Overview
A device's maximal input capacitance is 3.79pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 75A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
HUFA75645P3 Features
a 100V drain to source voltage (Vdss)
HUFA75645P3 Applications
There are a lot of Rochester Electronics, LLC
HUFA75645P3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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