HUFA75639S3ST

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Drain to Source Breakdown Voltage :

100V

FET Type :

N-Channel

ECCN Code :

EAR99

Length :

10.67mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

20 ns

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

25 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

9.65mm

Number of Elements :

1

Rise Time :

60ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

200W

Current - Continuous Drain (Id) @ 25°C :

56A Tc

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Factory Lead Time :

16 Weeks

Element Configuration :

Single

Power Dissipation-Max :

200W Tc

Mount :

Surface Mount

Vgs (Max) :

±20V

JESD-609 Code :

e3

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Height :

4.83mm

Turn On Delay Time :

15 ns

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

HTS Code :

8541.29.00.95

Continuous Drain Current (ID) :

56A

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Transistor Application :

SWITCHING

Published :

2002

Weight :

1.31247g

Number of Pins :

3

Voltage - Rated DC :

100V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.025Ohm

Case Connection :

DRAIN

Current Rating :

56A

Series :

Automotive, AEC-Q101, UltraFET™

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 25V

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

25m Ω @ 56A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)