HUFA75344G3
- Mfr.Part #
- HUFA75344G3
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 75A TO247-3
- Stock
- 96,233
- In Stock :
- 96,233
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 55V
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Packaging :
- Tube
- Pin Count :
- 3
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 285W Tc
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Package / Case :
- TO-247-3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.008Ohm
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 75A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 210nC @ 20V
- Transistor Application :
- SWITCHING
- Series :
- UltraFET™
- Qualification Status :
- COMMERCIAL
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSFM-T3
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Input Capacitance (Ciss) (Max) @ Vds :
- 3.2pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Pbfree Code :
- yes
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 75A
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 55V
- Terminal Finish :
- MATTE TIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- HUFA75344G3

N-Channel Tube 8m Ω @ 75A, 10V ±20V 3.2pF @ 25V 210nC @ 20V 55V TO-247-3
HUFA75344G3 Overview
A device's maximum input capacitance is 3.2pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 75A, and it is the maximum continuous current the device can conduct.For normal operation, maintain the DS breakdown voltage above 55V.To operate this transistor, you need to apply a 55V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
HUFA75344G3 Features
a 55V drain to source voltage (Vdss)
HUFA75344G3 Applications
There are a lot of Rochester Electronics, LLC
HUFA75344G3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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