HUFA75329P3
- Mfr.Part #
- HUFA75329P3
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 49A TO220-3
- Stock
- 43,948
- In Stock :
- 43,948
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1060pF @ 25V
- Supplier Device Package :
- TO-220-3
- Drain to Source Voltage (Vdss) :
- 55V
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 55V
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 24mOhm @ 49A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 75nC @ 20V
- Continuous Drain Current (ID) :
- 49A
- Rds On Max :
- 24 mΩ
- Voltage - Rated DC :
- 55V
- Power Dissipation-Max :
- 128W Tc
- Mount :
- Through Hole
- Drain to Source Resistance :
- 24mOhm
- Number of Pins :
- 3
- Min Operating Temperature :
- -55°C
- Series :
- UltraFET™
- Published :
- 2002
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 49A Tc
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 128W
- RoHS Status :
- RoHS Compliant
- Fall Time (Typ) :
- 33 ns
- Mounting Type :
- Through Hole
- Current Rating :
- 49A
- Package / Case :
- TO-220-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 33 ns
- Input Capacitance :
- 1.06nF
- Rise Time :
- 58ns
- Max Operating Temperature :
- 175°C
- Datasheets
- HUFA75329P3

N-Channel Tube 24mOhm @ 49A, 10V ±20V 1060pF @ 25V 75nC @ 20V 55V TO-220-3
HUFA75329P3 Overview
The maximum input capacitance of this device is 1060pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 49A.When VGS=55V, and ID flows to VDS at 55VVDS, the drain-source breakdown voltage is 55V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 33 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 24mOhm.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 55V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
HUFA75329P3 Features
a continuous drain current (ID) of 49A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 33 ns
single MOSFETs transistor is 24mOhm
a 55V drain to source voltage (Vdss)
HUFA75329P3 Applications
There are a lot of ON Semiconductor
HUFA75329P3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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