HUFA75329P3

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Mfr.Part #
HUFA75329P3
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 55V 49A TO220-3
Stock
43,948
In Stock :
43,948

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
4V @ 250µA
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
1060pF @ 25V
Supplier Device Package :
TO-220-3
Drain to Source Voltage (Vdss) :
55V
Lead Free :
Lead Free
Drain to Source Breakdown Voltage :
55V
Operating Temperature :
-55°C~175°C TJ
Gate to Source Voltage (Vgs) :
20V
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
24mOhm @ 49A, 10V
Gate Charge (Qg) (Max) @ Vgs :
75nC @ 20V
Continuous Drain Current (ID) :
49A
Rds On Max :
24 mΩ
Voltage - Rated DC :
55V
Power Dissipation-Max :
128W Tc
Mount :
Through Hole
Drain to Source Resistance :
24mOhm
Number of Pins :
3
Min Operating Temperature :
-55°C
Series :
UltraFET™
Published :
2002
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
49A Tc
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
128W
RoHS Status :
RoHS Compliant
Fall Time (Typ) :
33 ns
Mounting Type :
Through Hole
Current Rating :
49A
Package / Case :
TO-220-3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn-Off Delay Time :
33 ns
Input Capacitance :
1.06nF
Rise Time :
58ns
Max Operating Temperature :
175°C
Datasheets
HUFA75329P3
Introducing Transistors - FETs, MOSFETs - Single onsemi HUFA75329P3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-220-3, HUFA75329P3 pinout, HUFA75329P3 datasheet PDF, HUFA75329P3 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi HUFA75329P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi HUFA75329P3


N-Channel Tube 24mOhm @ 49A, 10V ±20V 1060pF @ 25V 75nC @ 20V 55V TO-220-3

HUFA75329P3 Overview


The maximum input capacitance of this device is 1060pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 49A.When VGS=55V, and ID flows to VDS at 55VVDS, the drain-source breakdown voltage is 55V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 33 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 24mOhm.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 55V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

HUFA75329P3 Features


a continuous drain current (ID) of 49A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 33 ns
single MOSFETs transistor is 24mOhm
a 55V drain to source voltage (Vdss)


HUFA75329P3 Applications


There are a lot of ON Semiconductor
HUFA75329P3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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