HN1B01FU-GR,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current - Collector (Ic) (Max) :

150mA

Package / Case :

6-TSSOP, SC-88, SOT-363

Packaging :

Cut Tape (CT)

Radiation Hardening :

No

Mounting Type :

Surface Mount

Max Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Published :

2014

Supplier Device Package :

US6

Collector Emitter Voltage (VCEO) :

250mV

Min Operating Temperature :

-55°C

Number of Pins :

6

Max Operating Temperature :

125°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

210mW

Collector Emitter Breakdown Voltage :

50V

Mount :

Surface Mount

Factory Lead Time :

14 Weeks

Power - Max :

200mW 210mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 6V

Transistor Type :

NPN, PNP

RoHS Status :

RoHS Compliant

Operating Temperature :

125°C TJ

Max Collector Current :

150mA

Current - Collector Cutoff (Max) :

100nA ICBO

Frequency - Transition :

150MHz

Voltage - Collector Emitter Breakdown (Max) :

50V