HN1B01FDW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Element Configuration :

Dual

Number of Terminations :

6

Pin Count :

6

Published :

2009

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

260

Width :

1.7mm

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

200mA

Length :

3.1mm

Voltage - Rated DC :

-60V

Number of Pins :

6

Transistor Type :

NPN, PNP

Collector Base Voltage (VCBO) :

60V

Power Dissipation :

380mW

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Polarity :

NPN, PNP

Height :

1.1mm

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 6V

hFE Min :

200

Max Collector Current :

200mA

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

-150mV

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA

ECCN Code :

EAR99

Contact Plating :

Tin

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Collector Emitter Breakdown Voltage :

50V

Package / Case :

SC-74, SOT-457

Emitter Base Voltage (VEBO) :

7V

Collector Emitter Voltage (VCEO) :

50V

Current - Collector Cutoff (Max) :

2µA

Pbfree Code :

yes

Surface Mount :

yes

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Max Power Dissipation :

380mW

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No