HN1A01FE-Y,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Arrays

Emitter Base Voltage (VEBO) :

-5V

Max Power Dissipation :

100mW

Operating Temperature :

150°C TJ

Height :

550μm

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

RoHS Status :

RoHS Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 2mA 6V

Frequency - Transition :

80MHz

Current - Collector (Ic) (Max) :

150mA

Package / Case :

SOT-563, SOT-666

hFE Min :

120

Min Operating Temperature :

-55°C

Polarity :

PNP

Mount :

Surface Mount

Max Operating Temperature :

150°C

Number of Pins :

6

Collector Emitter Saturation Voltage :

-100mV

Collector Base Voltage (VCBO) :

-50V

Length :

1.6mm

Width :

1.2mm

Supplier Device Package :

ES6

Max Breakdown Voltage :

50V

Continuous Collector Current :

-150mA

Current - Collector Cutoff (Max) :

100nA ICBO

Packaging :

Cut Tape (CT)

Voltage - Collector Emitter Breakdown (Max) :

50V

Factory Lead Time :

12 Weeks

Gain Bandwidth Product :

80MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

300mV

Collector Emitter Breakdown Voltage :

50V

Transistor Type :

2 PNP (Dual)

Power - Max :

100mW

Max Collector Current :

150mA

Published :

2014

Mounting Type :

Surface Mount