HN1A01FE-GR,LF
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- Mfr.Part #
- HN1A01FE-GR,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS 2PNP 50V 0.15A ES6
- Stock
- 3,287
- In Stock ：
- 3,287
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Max Collector Current :
- 150mA
- Published :
- 2014
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 100mW
- Polarity :
- PNP
- Max Breakdown Voltage :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- hFE Min :
- 120
- RoHS Status :
- RoHS Compliant
- Package / Case :
- SOT-563, SOT-666
- Collector Emitter Breakdown Voltage :
- 50V
- Power - Max :
- 100mW
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- -50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Reach Compliance Code :
- Unknown
- Collector Emitter Voltage (VCEO) :
- 300mV
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 6
- Factory Lead Time :
- 12 Weeks
- Continuous Collector Current :
- -150mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- 2 PNP (Dual)
- Collector Emitter Saturation Voltage :
- -300mV
- Emitter Base Voltage (VEBO) :
- -5V
- Gain Bandwidth Product :
- 80MHz
- Operating Temperature :
- 150°C TJ
- Datasheets
- HN1A01FE-GR,LF
HN1A01FE-GR,LF datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Semiconductor and Storage stock available at
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