H5N2522LSTL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Vgs (Max) :

±30V

Number of Elements :

1

Case Connection :

DRAIN

Package / Case :

SC-83

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

250V

Continuous Drain Current (ID) :

20A

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.18ohm

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

75W Tc

Rds On (Max) @ Id, Vgs :

180m Ω @ 10A, 10V

Published :

2010

Drain to Source Voltage (Vdss) :

250V

Mount :

Surface Mount

Pbfree Code :

yes

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

2

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Pulsed Drain Current-Max (IDM) :

60A

Pin Count :

4

Drive Voltage (Max Rds On,Min Rds On) :

10V