H5N2512FN-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

THROUGH-HOLE

JEDEC-95 Code :

TO-220AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Manufacturer :

Renesas Electronics Corporation

Transistor Element Material :

SILICON

Power Dissipation-Max (Abs) :

35 W

Pulsed Drain Current-Max (IDM) :

72 A

Reach Compliance Code :

Unknown

Brand Name :

Renesas

Package :

Bulk

Subcategory :

FET General Purpose Power

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Status :

Active

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

250 V

Qualification Status :

Not Qualified

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

18 A

ECCN Code :

EAR99

Series :

*

Package Shape :

RECTANGULAR

Terminal Position :

Single

Number of Terminals :

3

Drain-source On Resistance-Max :

0.105 Ω

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4