H5N2007FN-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

200 V

Number of Terminals :

3

Number of Elements :

1

Manufacturer :

Renesas Electronics Corporation

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

100 A

Series :

*

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code :

TO-220AB

Drain Current-Max (Abs) (ID) :

25 A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

4

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Terminal Form :

THROUGH-HOLE

Surface Mount :

No

Package Shape :

RECTANGULAR

Drain-source On Resistance-Max :

0.047 Ω

Case Connection :

Isolated

Brand Name :

Renesas

Power Dissipation-Max (Abs) :

30 W

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Package :

Bulk

Product Status :

Active

Transistor Application :

SWITCHING

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Polarity/Channel Type :

N-Channel

Subcategory :

FET General Purpose Power