G65P06T

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

-

Drive Voltage (Max Rds On, Min Rds On) :

10V

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Vgs (Max) :

±20V

Power Dissipation (Max) :

130W (Tc)

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

75 nC @ 10 V

Rds On (Max) @ Id, Vgs :

18mOhm @ 20A, 10V

FET Type :

P-Channel

Technology :

MOSFET (Metal Oxide)

Operating Temperature :

-55°C ~ 175°C (TJ)

Package :

Tube

Drain to Source Voltage (Vdss) :

60 V

Input Capacitance (Ciss) (Max) @ Vds :

5814 pF @ 25 V

Supplier Device Package :

TO-220

Series :

-

Product Status :

Active

Current - Continuous Drain (Id) @ 25°C :

65A (Tc)