G65P06F

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

6477 pF @ 25 V

Operating Temperature :

-55°C ~ 150°C (TJ)

Technology :

MOSFET (Metal Oxide)

Series :

-

Rds On (Max) @ Id, Vgs :

18mOhm @ 20A, 10V

Power Dissipation (Max) :

39W (Tc)

Supplier Device Package :

TO-220F

Drain to Source Voltage (Vdss) :

60 V

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Product Status :

Active

Package / Case :

TO-220-3 Full Pack

Drive Voltage (Max Rds On, Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

75 nC @ 10 V

Package :

Tube

FET Feature :

-

Current - Continuous Drain (Id) @ 25°C :

65A (Tc)

Mounting Type :

Through Hole