G65P06D5

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

FET Type :

P-Channel

Series :

-

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Power Dissipation (Max) :

130W (Tc)

Operating Temperature :

-55°C ~ 150°C (TJ)

Mounting Type :

Surface Mount

Package / Case :

8-PowerTDFN

Gate Charge (Qg) (Max) @ Vgs :

75 nC @ 10 V

Technology :

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C :

60A (Tc)

Drain to Source Voltage (Vdss) :

60 V

FET Feature :

-

Rds On (Max) @ Id, Vgs :

18mOhm @ 20A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

5814 pF @ 25 V

Vgs (Max) :

±20V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Supplier Device Package :

8-DFN (4.9x5.75)