G3R350MT12D
- Mfr.Part #
- G3R350MT12D
- Manufacturer
- GeneSiC Semiconductor
- Package / Case
- QFN
- Datasheet
- Download
- Description
- SIC MOSFET N-CH 11A TO247-3
- Stock
- 47,959
- In Stock :
- 47,959
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- Manufacturer :
- GeneSiC Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current Id :
- 11A
- Frequency Stability :
- ±20(ppm)
- Operating Temp Range :
- -40C to 85C
- FET Feature :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 334 pF @ 800 V
- Series :
- G3R
- Manufacturer :
- GeneSiC Semiconductor
- Transistor Type :
- MOSFET
- Subcategory :
- MOSFETs
- Configuration :
- Single
- Drive Voltage (Max Rds On, Min Rds On) :
- 15V
- Product Type :
- MOSFET
- FET Type :
- N-Channel
- Product :
- MOSFET
- Product Status :
- Active
- Vgs(th) (Max) @ Id :
- 2.69V @ 2mA
- Technology :
- SiC
- Programmable :
- No
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Brand :
- GeneSiC Semiconductor
- Standard Frequency :
- 125
- Base Product Number :
- G3R350
- Channel Mode :
- Enhancement
- Rds On (Max) @ Id, Vgs :
- 420mOhm @ 4A, 15V
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Symmetry Max :
- 55(%)
- Rise Time :
- 5 ns
- Operating Supply Voltage (Min) :
- 2.97(V)
- Vgs (Max) :
- ±15V
- Gate Charge (Qg) (Max) @ Vgs :
- 12 nC @ 15 V
- RoHS :
- Details
- Package / Case :
- QFN
- Transistor Polarity :
- N-Channel
- Mounting Type :
- Through Hole
- Power Dissipation (Max) :
- 74W (Tc)
- Number of Channels :
- 1 Channel
- Product Category :
- MOSFET
- Channel Type :
- N Channel
- Packaging :
- Bulk
- Power Dissipation :
- 74W
- Package :
- Tube
- Supplier Device Package :
- TO-247-3
- Mounting Style :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 1200 V
- Current - Continuous Drain (Id) @ 25°C :
- 11A (Tc)
- Operating Supply Voltage (Max) :
- 3.63(V)
- Type :
- Clock Oscillator
- Datasheets
- G3R350MT12D
SiC N-Channel Bulk 420mOhm @ 4A, 15V ±15V 334 pF @ 800 V 12 nC @ 15 V 1200 V QFN
G3R350MT12D Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 334 pF @ 800 V.Operating this transistor requires a 1200 V drain to source voltage (Vdss).
G3R350MT12D Features
a 1200 V drain to source voltage (Vdss)
G3R350MT12D Applications
There are a lot of GeneSiC Semiconductor
G3R350MT12D applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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