G3R30MT12J

Manufacturer :

GeneSiC Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±15V

FET Feature :

-

Frequency Stability :

±50(ppm)

Power Dissipation (Max) :

459W (Tc)

Package :

Tube

Packaging :

Bulk

Maximum Operating Temperature :

+ 175 C

Base Product Number :

G3R30

Number of Channels :

1 Channel

Supplier Device Package :

TO-263-7

Operating Supply Voltage (Max) :

3.63(V)

Channel Mode :

Enhancement

Minimum Operating Temperature :

- 55 C

Technology :

SiCFET (Silicon Carbide)

Vgs(th) (Max) @ Id :

2.69V @ 12mA

Power Dissipation :

459W

Operating Temperature :

-55°C ~ 175°C (TJ)

Current - Continuous Drain (Id) @ 25°C :

96A (Tc)

Mounting Type :

Surface Mount

Series :

G3R™

Gate Charge (Qg) (Max) @ Vgs :

155 nC @ 15 V

Operating Temp Range :

-40C to 85C

Programmable :

No

Continuous Drain Current Id :

96A

Standard Frequency :

156.25

Input Capacitance (Ciss) (Max) @ Vds :

3901 pF @ 800 V

FET Type :

N-Channel

Mounting Style :

SMD/SMT

Symmetry Max :

55(%)

Drain to Source Voltage (Vdss) :

1200 V

Drive Voltage (Max Rds On, Min Rds On) :

15V

Operating Supply Voltage (Min) :

2.25(V)

Transistor Polarity :

N-Channel

Rds On (Max) @ Id, Vgs :

36mOhm @ 50A, 15V

Package / Case :

QFN

Product Status :

Active

Channel Type :

N Channel

Type :

Clock Oscillator