G3R30MT12K

Manufacturer :

GeneSiC Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current Id :

90A

Drain to Source Voltage (Vdss) :

1200 V

Power Dissipation :

400W

Package / Case :

QFN

Type :

Clock Oscillator

Frequency Stability :

±25(ppm)

Drive Voltage (Max Rds On, Min Rds On) :

15V

Transistor Polarity :

N-Channel

Number of Channels :

1 Channel

Operating Supply Voltage (Max) :

3.63(V)

Symmetry Max :

55(%)

Maximum Operating Temperature :

+ 175 C

Package :

Tube

Technology :

SiCFET (Silicon Carbide)

Input Capacitance (Ciss) (Max) @ Vds :

3901 pF @ 800 V

Operating Supply Voltage (Min) :

2.25(V)

Product Status :

Active

Operating Temp Range :

-20C to 70C

Gate Charge (Qg) (Max) @ Vgs :

155 nC @ 15 V

Mounting Style :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Vgs (Max) :

±15V

Series :

G3R™

Packaging :

Bulk

Channel Type :

N Channel

FET Feature :

-

Supplier Device Package :

TO-247-4

Minimum Operating Temperature :

- 55 C

Current - Continuous Drain (Id) @ 25°C :

90A (Tc)

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

36mOhm @ 50A, 15V

Mounting Type :

Through Hole

Standard Frequency :

33.333

Load Capacitance :

15(pF)

Power Dissipation (Max) :

400W (Tc)

Vgs(th) (Max) @ Id :

2.69V @ 12mA

Channel Mode :

Enhancement

Base Product Number :

G3R30

Programmable :

No