FZT458TA
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- Mfr.Part #
- FZT458TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.3A SOT223-3
- Stock
- 37,788
- In Stock ：
- 37,788
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Pbfree Code :
- No
- Mount :
- Surface Mount
- Voltage :
- 400V
- JESD-30 Code :
- R-PDSO-G4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Packaging :
- Cut Tape (CT)
- Collector Emitter Voltage (VCEO) :
- 400V
- Number of Terminations :
- 4
- Published :
- 2006
- Radiation Hardening :
- No
- Max Collector Current :
- 300mA
- Max Power Dissipation :
- 2W
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 400V
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 6mA, 50mA
- Length :
- 6.7mm
- Width :
- 3.7mm
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 400V
- Current - Collector Cutoff (Max) :
- 100nA
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Weight :
- 7.994566mg
- Package / Case :
- TO-261-4, TO-261AA
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 500mV
- Transition Frequency :
- 50MHz
- Frequency :
- 50MHz
- Element Configuration :
- Single
- Current :
- 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- 300mA
- Transistor Application :
- SWITCHING
- Continuous Collector Current :
- 300mA
- Gain Bandwidth Product :
- 50MHz
- Lead Free :
- Lead Free
- Base Part Number :
- FZT458
- Max Breakdown Voltage :
- 400V
- Terminal Finish :
- Matte Tin (Sn)
- Voltage - Rated DC :
- 400V
- Power Dissipation :
- 3W
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.65mm
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Datasheets
- FZT458TA
NPN -55°C~150°C TJ 100nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT458TA Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 6mA, 50mA.Maintaining the continuous collector voltage at 300mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (300mA).50MHz is present in the transition frequency.An input voltage of 400V volts is the breakdown voltage.Maximum collector currents can be below 300mA volts.
FZT458TA Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 50MHz
FZT458TA Applications
There are a lot of Diodes Incorporated
FZT458TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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