FZT458TA
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- Mfr.Part #
- FZT458TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.3A SOT223-3
- Stock
- 37,788
- In Stock ：
- 37,788
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 400V
- Published :
- 2006
- Max Collector Current :
- 300mA
- Pbfree Code :
- No
- Gain Bandwidth Product :
- 50MHz
- Current Rating :
- 300mA
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 50MHz
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 500mV
- Max Breakdown Voltage :
- 400V
- Collector Emitter Breakdown Voltage :
- 400V
- Voltage :
- 400V
- Package / Case :
- TO-261-4, TO-261AA
- JESD-30 Code :
- R-PDSO-G4
- Collector Base Voltage (VCBO) :
- 400V
- Continuous Collector Current :
- 300mA
- Terminal Form :
- Gull wing
- Current :
- 3A
- Polarity/Channel Type :
- NPN
- Packaging :
- Cut Tape (CT)
- Voltage - Rated DC :
- 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Number of Terminations :
- 4
- Width :
- 3.7mm
- Transistor Type :
- NPN
- Max Power Dissipation :
- 2W
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 6.7mm
- Height :
- 1.65mm
- Frequency :
- 50MHz
- Case Connection :
- COLLECTOR
- Base Part Number :
- FZT458
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 6mA, 50mA
- Weight :
- 7.994566mg
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Power Dissipation :
- 3W
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Datasheets
- FZT458TA
FZT458TA Documents
NPN -55°C~150°C TJ 100nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT458TA Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 6mA, 50mA.Maintaining the continuous collector voltage at 300mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (300mA).50MHz is present in the transition frequency.An input voltage of 400V volts is the breakdown voltage.Maximum collector currents can be below 300mA volts.
FZT458TA Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 50MHz
FZT458TA Applications
There are a lot of Diodes Incorporated
FZT458TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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