FZT458TA
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- Mfr.Part #
- FZT458TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.3A SOT223-3
- Stock
- 37,788
- In Stock ：
- 37,788
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2006
- Transition Frequency :
- 50MHz
- Width :
- 3.7mm
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 400V
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- NPN
- Length :
- 6.7mm
- Height :
- 1.65mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 6mA, 50mA
- Max Breakdown Voltage :
- 400V
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Base Voltage (VCBO) :
- 400V
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 7.994566mg
- Current Rating :
- 300mA
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PDSO-G4
- Base Part Number :
- FZT458
- Gain Bandwidth Product :
- 50MHz
- Current :
- 3A
- Packaging :
- Cut Tape (CT)
- Continuous Collector Current :
- 300mA
- Voltage :
- 400V
- Number of Terminations :
- 4
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Frequency :
- 50MHz
- Element Configuration :
- Single
- Terminal Finish :
- Matte Tin (Sn)
- Number of Pins :
- 3
- Package / Case :
- TO-261-4, TO-261AA
- Pbfree Code :
- No
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 400V
- Power Dissipation :
- 3W
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 400V
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 2W
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Max Collector Current :
- 300mA
- Datasheets
- FZT458TA
FZT458TA Documents
NPN -55°C~150°C TJ 100nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT458TA Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 6mA, 50mA.Maintaining the continuous collector voltage at 300mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (300mA).50MHz is present in the transition frequency.An input voltage of 400V volts is the breakdown voltage.Maximum collector currents can be below 300mA volts.
FZT458TA Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 50MHz
FZT458TA Applications
There are a lot of Diodes Incorporated
FZT458TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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