FZT493TA
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- Mfr.Part #
- FZT493TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A SOT223-3
- Stock
- 529
- In Stock ：
- 529
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 7.994566mg
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 100V
- Continuous Collector Current :
- 1A
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 120V
- Mounting Type :
- Surface Mount
- Length :
- 6.7mm
- Max Breakdown Voltage :
- 100V
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Power Dissipation :
- 2W
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Published :
- 2000
- Voltage - Rated DC :
- 100V
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 250mA 10V
- Transition Frequency :
- 150MHz
- Height :
- 1.65mm
- Max Power Dissipation :
- 2W
- Number of Terminations :
- 4
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 150MHz
- Factory Lead Time :
- 15 Weeks
- Package / Case :
- TO-261-4, TO-261AA
- REACH SVHC :
- No SVHC
- Width :
- 3.7mm
- Collector Emitter Saturation Voltage :
- 600mV
- Pbfree Code :
- No
- Polarity/Channel Type :
- NPN
- Current Rating :
- 1A
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN
- Max Collector Current :
- 1A
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 100V
- Gain Bandwidth Product :
- 150MHz
- Base Part Number :
- FZT493
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Datasheets
- FZT493TA
NPN -55°C~150°C TJ 100nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT493TA Overview
DC current gain in this device equals 100 @ 250mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 100mA, 1A.Single BJT transistor is essential to maintain the continuous collector voltage at 1A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 100V volts.In extreme cases, the collector current can be as low as 1A volts.
FZT493TA Features
the DC current gain for this device is 100 @ 250mA 10V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
FZT493TA Applications
There are a lot of Diodes Incorporated
FZT493TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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